sop8 plastic-encapsulate mosfets CJQ4828 dual n-channel mosfet description the CJQ4828 uses advanced trench te chnology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. maximum ratings (t a =25 unless otherwise noted) parameter symbol value units drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (t 10s ) (note 1) i d 4.5 a pulsed drain current (note 2) i dm 20 a power dissipation p d 1.25 w thermal resistance from junction to ambient (t 10s ) (note 1) r ja 100 /w avalanche current (note 2) i ar, i as 19 a repetitive avalenche energy 0.1mh (note 2) e ar, e as 18 mj junction temperature t j 150 storage temperature t stg -55~ 150 sop8 1 of 3 sales@zpsemi.com www.zpsemi.com CJQ4828
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static parameters drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 60 v zero gate voltage drain current i dss v ds =60v,v gs = 0v 1 a gate-body leakage current i gss v gs =20v, v ds = 0v 100 na gate threshold voltage (note 3) v gs(th) v ds =v gs , i d =250a 1 3 v v gs =10v, i d =4.5a 56 m ? drain-source on-resistance (note 3) r ds(on) v gs =4.5v, i d =3a 77 m ? forward tranconductance (note 3) g fs v ds =5v, i d =4.5a 6 s diode forward voltage (note 3) v sd i s =1a, v gs = 0v 1 v dynamic parameters (note 4) input capacitance c iss 540 pf output capacitance c oss 60 pf reverse transfer capacitance c rss v ds =30v,v gs =0v,f =1mhz 25 pf switching parameters (note 4) turn-on delay time t d(on) 4.7 ns turn-on rise time t r 2.3 ns turn-off delay time t d(off) 15.7 ns turn-off fall time t f v gs =10v,v ds =30v, r l =6.7 ? ,r gen =3 ? 1.9 ns total gate charge (10v) 10.5 nc total gate charge (4.5v) q g 5.5 nc gate-source charge q gs 1.6 nc gate-drain charge q gd v ds =30v,v gs =10v,i d =4.5a 2.2 nc notes : 1. the value in any given application depends on the user?s specific board design. 2. repetitive rating : pulse width limited by junction temperature. 3. pulse test : pulse width 300s, duty cycle 0.5%. 4. these parameters have no way to verify. 2 of 3 sales@zpsemi.com www.zpsemi.com CJQ4828
012345 0 5 10 15 20 012345 0 5 10 15 20 24681 0 0 50 100 150 200 0 5 10 15 20 0 50 100 150 200 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 pulsed v gs = 4.5v v gs = 5.0v v gs = 10v v gs = 4.0v v gs = 3.5v drain current i d (a) drain to source voltage v ds (v) output characteristics t a =100 t a =25 v ds = 5v pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) v gs r ds(on) ?? on-resistance r ds(on) (m ) gate to source voltage v gs (v) t a =25 pulsed i d = 4.5a t a =25 pulsed on-resistance r ds(on) (m ) drain current i d (a) v gs = 4.5v v gs = 10v ?? i d r ds(on) t a =25 pulsed v sd i s ?? source current i s (a) source to drain voltage v sd (v) 20 25 50 75 100 125 1.7 1.8 1.9 2.0 2.1 2.2 i d = 250ua threshold voltage ambient temperature t a ( ) threshold voltage v th (v) 3 of 3 sales@zpsemi.com www.zpsemi.com CJQ4828
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